reactive ion beam etching

Technology of reactive ion beam etching of blazed gratings

反应离子束刻蚀闪耀光栅技术

The development of soft X-ray CZP included design of optical path, selection of material, preparation of thin film, sub-micron lithography, X-ray lithography, reactive ion etching, ion beam etching, electroplating and chemical etching.

软X射线聚焦波带片的研制包括光路设计、膜系设计、衬底选择、薄膜制备、亚微米光刻、X射线光刻、反应离子刻蚀、离子束刻蚀、电镀和化学腐蚀等多种微细加工技术。

Investigation on Reactive Ion Beam Etching of SiO_2 and Si

反应离子束刻蚀二氧化硅和硅研究

The SiO2 holographic blazed grating with good quality and high diffraction efficiency have been developed by reactive ion beam etching and holographic grating mask made by lensless Fourier transform holography recording.

本文报道以无透镜傅里叶全息术变换记录的全息光栅作掩膜，应用反应离子束入射角控制光栅闪耀角，选择了合适刻蚀工艺参数，制得衍射效率为67%的SiO2全息闪耀光栅。

Reactive ion beam etching for diffractive optical elements

衍射光学元件的反应离子束蚀刻研究

Reactive Ion Beam Etching and Thermal Effect

反应离子束蚀刻中温度效应的研究

Reactive Ion Beam Etching Machine, RIBE-5

RIBE-5型反应离子束刻蚀机

The means of fabricating computer optical element ( COE) are discussed. The new developments of gray-level mask, reactive ion beam etching and laser direct-writing in fabricating process are emphasized, and the application of COE in the space-focusing implement and lidar are introduced.

论述计算机光学元件制作的方法，着重介绍了灰度掩模技术，反应离子束刻蚀法和激光直写技术，并且说明了其在空间聚焦器上和激光雷达上的新应用。

By means of SiO 2 mask and SF 6 etching corrosive, the cantilever beam with tip is shaped by reactive ion etching once through operation. The probe has been shaped by wet corrosive and the tip radius is about 50 nm.

以SiO2为掩模，SF6刻蚀硅，用RIE与各向同性湿法化学腐蚀相结合使悬臂梁探针一次成形和用湿法腐蚀锐化探针，针尖半径约50nm。

The results on fabrication of refractive microlens arrays using heat forming and reactive ion beam etching ( RIBE) techniques are presented.

提出一种微透镜阵列复制的新方法反应离子束蚀刻法（RIBE）。

Reactive ion beam etching process is one of the ultrafine machining techniques which have been rapidly developed in recent years. Patterns on the working pieces are made by sputtering effects and chemical reaction which occur when reactive ion beam bombard the solid surface.

反应离子束刻蚀技术是近年来发展起来的一种微细加工技术，它利用反应离子束轰击团体表面时发生的溅射效应和化学反应剥离加工工作上的几何图形。

Reactive Ion Beam Etching Applied to Photoresist Ashing

反应离子束刻蚀应用于光刻胶灰化技术研究

The silicon wafers were highly polished by reactive ion beam etching ( RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropriate hours.

利用反应离子束蚀刻（RIBE）对基片进行抛光，使得键合表面达到2nm级的表面粗糙度.在大气的环境下将处理过的玻璃、Si基片干燥，进行预键合。

Reactive ion beam etching technique has been effectively used to study and fabricate large-scale and ultra large scale integrated circuit, acoustic surface wave device, magnetic bubble device microwave device, integrated optical circuit, superconducting device, shimmer optical pattern etc.

反应离子束刻蚀技术已有效地用于研究和制造大规模和超大规模集成电路，声表面波器件，磁泡存储器，微波器件，集成光路，超导器件，闪烁光栅等。

Research on Ar/ CHF_3 Reactive Ion Beam Etching of SiO_2

Ar/CHF3反应离子束刻蚀SiO2的研究